Published October 1998
by Materials Research Society .
Written in English
|Contributions||S. Ashok (Editor), J. Chevallier (Editor), K. Sumino (Editor), B. L. Sopori (Editor), W. Gotz (Editor)|
|The Physical Object|
|Number of Pages||678|
Defect and impurity engineered semiconductors and devices III. Warrendale, Pa.: Materials Research Society, © (OCoLC) Material Type: Conference publication: Document Type: Book: All Authors / Contributors: S Ashok. This book, first published in , focuses on the application of defects and impurities in current and emerging semiconductor technologies. The role of defects in the evolution of semiconductor technology is now recognized as one of refined control - in density, properties, spatial location, and perhaps even temporal variation during device operating : $ Symposium D-Defect and Impurity Engineered Semiconductors and Devices II from the MRS Spring Meeting. Types of extended defect in semiconductors 75 Dislocations, plastic deformation and slip systems 77 Electrical effects of dislocations in semiconductors Plasticity of semiconductors References Symbols 3 Characterization of extended defects in semiconductors Introduction Microscopy techniques
Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect by: Key words: semiconductor, shallow impurity, deep impurity, bound exciton, densityfunctional - theory, effective-mass theory, hydrogen model. PACS numbers: i Impurity and defect levels, i Conductivity phenomena in semiconductors and insulators, e Optical properties of bulk materials and thin films * @ed by: 2. Intrinsic Defects in Semiconductors In all previous consideration of crystal structure and crystal growth, for simplicity it has been assumed that the silicon crystal lattice is entirely free of defects. Of course, in A second type of intrinsic point defect is a self-interstitial. This kind of defect can beFile Size: KB. The defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥°C).Cited by: 9.
25th International Conference on Book of ABstrActs St Petersburg, Russia, July 20–24, Defects in Book of A Semiconductors B str A cts ICDS 9 ICDS ISBN File Size: 1MB. Also amorphous solids may contain defects. These are naturally somewhat hard to define, but sometimes their nature can be quite easily understood. For instance, in ideally bonded amorphous silica all Si atoms have 4 bonds to O atoms and all O atoms have 2 bonds to Si atom. Thus e.g. an O atom with only one Si bond (a dangling bond) can be considered a defect in silica. DEFECT ENGINEERING OF METAL OXIDE SEMICONDUCTORS. BY. KYONG WOOK NOH. THESIS. Submitted in partial fulfillment of the requirements. for the degree of Master of Science in Chemical Engineering. in the Graduate College of the. University of Illinois at Urbana-Champaign, Urbana, Illinois. Advisor: Professor Edmund Seebauer. S. Johnston and R.K. Ahrenkiel, Measurement of the temperature dependence of silicon recombination lifetimes, Defect and Impurity Engineered Semiconductors II (Symposium) (Warrendale, PA, USA, ), pp. – Google Scholar.